sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 mbr2050/2060ct mbrb2050/2060ct mbr2050/2060ct-1 schottky rectifier applications: switching power supply converters free-wheeling diodes reverse battery protection features: 150 t j operation center tap configuration low forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistance high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in inches / mm to-220ab case styles mbr2050ct mbr2060ct to-220ab mbrb2050ct MBRB2060CT d 2 pak mbr2050ct-1 mbr2060ct-1 to-262
sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 d 2 pak to-262 dimensions in millimeters symbol min. typical max. a 4.55 4.70 4.85 a1 0 0.10 0.25 a2 2.59 2.69 2.89 b 0.71 0.81 0.96 b1 1.27 c 0.36 0.38 0.61 c1 1.17 1.27 1.37 d 8.55 8.70 8.85 d1 6.40 e 10.01 10.16 10.31 e1 7.6 e2 9.98 10.08 10.18 e 2.54 h 14.6 15.1 15.6 l 2.00 2.30 2.70 l1 1.17 1.27 1.40 l2 2.20 l3 0.25bsc e 0 - 8 e1 5 e2 4 e3 4
sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 marking diagram: where xx is reverse voltage where xxxxx is yywwl mbr = device type b = package type 20 = forward current (20a) xx = reverse voltage (50/60v) ct/ct-1 = configuration ssg = ssg yy = year ww = week l = lot number mbr20xxct mbrb20xxct cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping mbr20xxct mbr20xxct-1 to-220ab (pb-free) 50pcs / tube mbrb20xxct d 2 pak (pb-free) 800pcs / reel for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units 50 mbr2050ct peak inverse voltage v rwm - 60 mbr2060ct v average rectified output current i o 50hz full sine wave resistive load @t c = 80 c 20 a max. peak one cycle non- repetitive surge current (per leg) i fsm 8.3ms,50hz full sine wave, 1cycle non-repetitive 180 a
sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 electrical characteristics: characteristics symbol condition max. units v f1 @ 10a, pulse, t j = 25 @ 20 a, pulse, t j = 25 c 0.80 0.95 v forward voltage drop* v f2 @ 10a, pulse, t j = 125 @ 20a, pulse, t j = 125 c 0.70 0.85 v reverse current (per leg)* i r1 @v r = rated vr t j = 25 1.0 ma i r2 @v r = rated vr t j = 125 150 ma junction capacitance (per leg) c t @v r = 5v, t c = 25 f sig = 1mhz 400 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 8.0 nh max. voltage rate of change dv/dt - 10,000 v/ s ? * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r q jc dc operation 2.3 c/w typical thermal resistance case to heat sink r q cs mounting surface, smooth and greased (only for to-220) 0.50 c/w approximate weight wt - 2 g case style ito-220ab
sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 forward voltage drop (v) instantaneous forward current (a) 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current-ir(ma) 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse voltage (v) junction capacitance (pf) fig.2 - typical reverse characteristics fig.3 - typical instantaneous forward voltage characteristi cs fig.1-typical junction capacitance tj=125 tj=25 tj=125 tj=25 tj=25
sangdest microelectronics technical data green products data sheet n0034, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr2050/2060ct mbrb2050/2060ct mbr 2050/2060 ct - 1 disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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